Infineon IAUZ20N08S5L300: High-Performance 60V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IAUZ20N08S5L300 stands out as a premier solution, embodying the advanced technology of the OptiMOS™ 5 60V power MOSFET platform. This device is engineered to deliver exceptional performance in a compact, space-saving package, making it an ideal choice for a wide array of demanding applications.

A key highlight of the IAUZ20N08S5L300 is its extremely low typical on-state resistance (RDS(on)) of just 0.8 mΩ (max. at 10 V). This remarkably low resistance is a cornerstone of its high efficiency, as it minimizes conduction losses during operation. By reducing power dissipation, the MOSFET operates cooler, which enhances overall system reliability and can often allow for simpler thermal management designs or even the removal of a heatsink in some use cases.

Housed in the innovative SuperSO8 package (PG-TSDSO-8), this MOSFET offers a significantly reduced footprint compared to standard D2PAK or DPAK packages. Despite its small size, the package is designed for superior thermal dissipation, featuring an exposed top side that can be used for cooling. This makes it perfectly suited for modern, high-density power conversion systems where board space is at a premium.

The OptiMOS™ 5 technology also provides excellent switching characteristics. The device features low gate charge (Qg) and figures of merit that optimize both switching speed and losses. This results in higher switching frequencies, which in turn allows for the use of smaller passive components like inductors and capacitors, further reducing the overall size and cost of the power supply design.

Typical applications for the Infineon IAUZ20N08S5L300 are diverse and include:

Synchronous rectification in switched-mode power supplies (SMPS)

DC-DC converters for telecom, server, and industrial computing

Motor drive and control circuits

Battery management systems (BMS) and protection

ICGOOFind Summary: The Infineon IAUZ20N08S5L300 is a benchmark 60V power MOSFET that combines an ultra-low RDS(on) with the thermal advantages of the SuperSO8 package. It is a top-tier component for designers seeking to maximize power density and efficiency in their next-generation applications.

Keywords: OptiMOS 5, Low RDS(on), SuperSO8, Power Efficiency, Synchronous Rectification