Infineon BSD840NH6327XTSA1 N-Channel MOSFET: Datasheet, Application Notes, and Technical Specifications
The Infineon BSD840NH6327XTSA1 is a state-of-the-art N-Channel MOSFET engineered using Infineon's advanced OptiMOS™ 7 technology. This power semiconductor device is designed to deliver exceptional efficiency and robustness in a compact, space-saving package, making it an ideal solution for a wide array of modern power management applications.
Technical Specifications and Key Features
This MOSFET is characterized by its very low on-state resistance (RDS(on)) of just 3.7 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is a hallmark of the OptiMOS™ 7 family, directly translating to minimal conduction losses and higher overall system efficiency. The device boasts a continuous drain current (ID) rating of 84 A, with a drain-source voltage (VDS) capability of 40 V, making it perfectly suited for handling high currents in low-voltage environments.
Housed in the robust SuperSO8 (PG-TDSON-8) package, the BSD840NH6327XTSA1 offers an excellent power-to-size ratio. This package is designed for enhanced thermal and electrical performance, facilitating efficient heat dissipation away from the chip. Furthermore, the device features a low gate charge (Qg) and exceptional switching performance, which are critical for high-frequency operation, enabling designers to shrink the size of magnetic components and capacitors.
Primary Applications
The combination of high current handling, low losses, and fast switching speed positions this MOSFET as a premier choice for:
DC-DC Conversion: Especially in synchronous buck converters for point-of-load (POL) regulation in computing motherboards, servers, and telecom infrastructure.
Motor Control: Driving brushed DC motors in power tools, robotics, and automotive systems.
Power Management Units (PMUs): In battery-powered devices, where efficiency is paramount for extending battery life.
Load Switching: Managing high-current rails in industrial and consumer electronics.
Application Notes and Design Considerations
For optimal performance, designers should adhere to several key guidelines:
1. Gate Driving: A dedicated gate driver IC is highly recommended to ensure swift and controlled switching, minimizing time in the linear region and reducing switching losses. The driver must be capable of delivering sufficient peak current to charge and discharge the gate quickly.
2. PCB Layout: A proper layout is non-negotiable for high-performance switching. It is crucial to minimize parasitic inductance in the high-current loop (drain and source paths) and the gate drive loop. Using a large, continuous ground plane and placing decoupling capacitors close to the device are essential practices.
3. Thermal Management: Despite its low RDS(on), managing heat is critical under high-load conditions. Ensure adequate copper area (heatsinking) on the PCB connected to the drain tabs. For extreme loads, additional active cooling or a heatsink may be necessary.
Conclusion
The Infineon BSD840NH6327XTSA1 represents a significant leap in power MOSFET technology, offering designers a potent combination of ultra-low RDS(on), high current capability, and superior switching characteristics in a miniature footprint. Its performance metrics make it an indispensable component for creating more efficient, power-dense, and reliable next-generation electronic systems.
ICGOODFIND: The Infineon BSD840NH6327XTSA1 is a top-tier OptiMOS™ 7 power MOSFET, delivering industry-leading efficiency and power density for demanding applications like DC-DC conversion and motor control.
Keywords: OptiMOS™ 7, Low RDS(on), SuperSO8 Package, High-Efficiency, Power Management
