Infineon BSZ050N03MSG 30V N-Channel MOSFET: Datasheet, Application Circuits, and Features
The Infineon BSZ050N03MSG is a state-of-the-art N-Channel MOSFET engineered using Infineon’s advanced OptiMOS™ power technology. Designed for operation with a drain-source voltage (VDS) of 30V, this MOSFET is optimized for high-efficiency power management in a compact form factor. It is particularly suited for applications requiring low on-state resistance and high current handling in a small footprint, such as synchronous rectification in DC-DC converters and load switching in portable devices.
Key Features and Electrical Characteristics
A standout feature of the BSZ050N03MSG is its exceptionally low on-resistance (RDS(on)), which is typically just 5.0 mΩ at 10 V gate-source voltage. This low resistance minimizes conduction losses, leading to higher system efficiency and reduced heat generation. The device is also characterized by its high continuous drain current (ID) rating of 11 A, making it robust for power-intensive applications. Housed in a SuperSO8 package, it offers an excellent thermal performance-to-size ratio, which is critical for space-constrained modern electronics.
The MOSFET’s low gate charge (Qg) and fast switching capabilities ensure that it operates efficiently at high frequencies, which is essential for minimizing switching losses in switch-mode power supplies (SMPS). Furthermore, its avalanche ruggedness provides an additional layer of reliability in harsh operating environments.
Datasheet Overview
The official datasheet for the BSZ050N03MSG provides comprehensive information necessary for design-in. Key sections include:
- Absolute Maximum Ratings: Outlining the limits for parameters like drain-source voltage, gate-source voltage, and continuous drain current to ensure safe operation.
- Thermal Characteristics: Details on junction-to-ambient and junction-to-case thermal resistances, crucial for heat dissipation planning.
- Static and Switching Characteristics: Detailed graphs and tables depicting RDS(on) vs. gate voltage, switching times, and body-diode forward voltage.
Engineers should pay close attention to the Safe Operating Area (SOA) graph and the thermal derating curves to ensure reliable performance under all conditions.
Application Circuits
The BSZ050N03MSG is a versatile component ideal for a variety of power electronics applications. Two primary circuit examples include:
1. Synchronous Buck Converter: In a DC-DC synchronous buck converter, this MOSFET is typically used as the low-side switch. Its low RDS(on) is critical for minimizing power loss during the freewheeling phase, directly boosting the converter's overall efficiency. Designers must focus on optimizing the gate drive circuit to leverage its fast switching speed fully.
2. Load and Power Management Switch: In battery-powered devices like smartphones, tablets, and laptops, the BSZ050N03MSG acts as an efficient load switch. It controls power delivery to subsystems, enabling power gating to extend battery life. Its small package and low on-resistance make it perfect for densely packed PCBs.
The Infineon BSZ050N03MSG stands out as an exceptional component for designers seeking to maximize efficiency and power density. Its superior blend of ultra-low on-resistance, high current capability, and compact packaging makes it an optimal choice for next-generation power management solutions in consumer, computing, and industrial applications.
Keywords:
1. OptiMOS™
2. Low RDS(on)
3. Synchronous Rectification
4. Power Management
5. SuperSO8 Package
