Infineon IPW65R190CFD: Redefining High-Voltage Power Conversion Efficiency
The Infineon IPW65R190CFD stands at the forefront of power semiconductor technology, representing a significant leap in performance for high-voltage applications. As part of Infineon’s CoolMOS™ CFD7 family, this 650V superjunction MOSFET combines ultra-low on-state resistance with advanced switching characteristics, making it an ideal choice for modern switch-mode power supplies (SMPS), industrial drives, photovoltaic inverters, and electric vehicle charging systems.
With an impressive 190mΩ maximum RDS(on) at room temperature, the IPW65R190CFD drastically reduces conduction losses. This exceptionally low resistance is achieved through Infineon’s latest superjunction technology, which optimizes the trade-off between on-resistance and switching performance. The result is a device that operates with outstanding efficiency, even under high-load conditions, helping power design engineers meet stringent energy regulations such as ErP and 80 PLUS.
A key innovation in the CFD7 series is the integrated fast body diode. This feature enhances the MOSFET’s robustness in hard-switching and inductive load applications, reducing reverse recovery charge (Qrr) and minimizing switching losses. The improved diode characteristics also contribute to higher reliability in continuous operation, making it particularly suitable for power factor correction (PFC) stages and LLC resonant converters.
Moreover, the IPW65R190CFD offers excellent dv/dt controllability and reduced electromagnetic interference (EMI), simplifying filter design and compliance with EMI standards. Its low gate charge (Qg) and low output capacitance (Coss) further ensure efficient high-frequency switching, enabling more compact and lighter power supplies without sacrificing thermal performance.
Designed in a TO-247 package, the device provides superior thermal conductivity and power dissipation capability. This mechanical robustness, combined with high electrical performance, ensures long-term reliability even in demanding environments.
The Infineon IPW65R190CFD sets a new benchmark in high-voltage power transistors by delivering an optimal blend of low conduction loss, fast switching speed, and diode ruggedness. It is an essential component for next-generation high-efficiency and high-density power conversion systems.
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Keywords:
CoolMOS™ CFD7, 650V MOSFET, 190mΩ RDS(on), Fast Body Diode, Power Efficiency
